Electron field emission from amorphous silicon
نویسندگان
چکیده
منابع مشابه
Electron field emission from surface treated tetrahedral amorphous carbon films
The electron field emission properties of tetrahedral amorphous carbon thin films deposited using a filtered cathodic vacuum arc system have improved as a result of surface treatment with H, O, and Ar ions. The limiting factor of the emission process does not appear to be only the front surface of the films. The improvement in the emission after ion beam treatment appears to be independent of t...
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The electron field emission of tetrahedral amorphous carbon ~ta-C! films deposited by filtered cathodic vacuum arc is reported. The ta-C films were found to have a threshold field ranging from 18 to 28 V mm, depending on the sp content. The nitrogenated ta-C ~ta-C:N! films show a lower threshold field of 12 V mm as compared to the ta-C films. The threshold field appears to be dependent on the f...
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Porous silicon planar emitters were fabricated by depositing a thin Au film on a conventional porous Si and their emission characteristics were examined. The emission currents and energy distributions were measured for the emitters with various Au thicknesses and for cesiated ones. The experimental results suggest that the emission mechanism of the porous silicon emitter studied in this work is...
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Hung-Chi Wu,† Tsung-Yen Tsai,† Fu-Hsuan Chu,† Nyan-Hwa Tai,† Heh-Nan Lin,† Hsin-Tien Chiu,‡ and Chi-Young Lee*,†,§ Department of Materials Science and Engineering, National Tsing Hua UniVersity, Hsinchu 30013, Taiwan, Republic of China, Department of Applied Chemistry, National Chiao Tung UniVersity, Hsinchu, Taiwan 30010, Republic of China, and Center for Nanotechnology, Materials Science, and...
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We report on strongly enhanced electron multiplication in thin silicon membranes. The device is configured as a transmission-type membrane for electron multiplication. A subthreshold electric field applied on the emission side of the membrane enhances the number of electrons emitted by two orders of magnitude. This enhancement stems from field emitted electrons stimulated by the incident partic...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 1999
ISSN: 0734-211X
DOI: 10.1116/1.590601